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| POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 PHASE CONTROL THYRISTOR AT1004 Repetitive voltage up to Mean on-state current Surge current 1600 V 1545 A 24.6 kA FINAL SPECIFICATION feb 97 - ISSUE : 06 Symbol Characteristic Conditions Tj [C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 1600 1700 1600 50 50 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I t On-state voltage Threshold voltage On-state slope resistance 180 sin, 50 Hz, Th=55C, double side cooled 180 sin, 50 Hz, Tc=85C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 2900 A 25 125 125 125 1545 1255 24.6 3026 x1E3 1.63 0.92 0.216 A A kA As V V mohm I t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 1650 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 25V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear up to 75% VDRM di/dt=-20 A/s, I= 1080 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30s 125 125 25 125 25 25 200 500 1.1 250 A/s V/s s s C A 300 700 mA mA GATE V I V V I V P P GT GT GD FGM FGM RGM GM G Gate trigger voltage Gate trigger current Non-trigger gate voltage, min. Peak gate voltage (forward) Peak gate current Peak gate voltage (reverse) Peak gate power dissipation Average gate power dissipation VD=5V VD=5V VD=VDRM 25 25 125 3.5 300 0.25 30 10 5 V mA V V A V W W Pulse width 100 s 150 2 MOUNTING R R T F th(j-h) th(c-h) j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AT1004 S 16 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 26 6 -30 / 125 18.0 / 20.0 500 C/kW C/kW C kN g VDRM&VRRM/100 AT1004 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 06 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SQUARE WAVE Th [C] 130 120 110 100 90 80 70 60 50 0 500 30 60 DC 90 120 180 1000 1500 2000 2500 IF(AV) [A] PF(AV) [W] 3000 DC 2500 90 120 180 2000 30 60 1500 1000 500 0 0 500 1000 1500 2000 2500 IF(AV) [A] AT1004 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 06 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation DISSIPATION CHARACTERISTICS SINE WAVE Th [C] 130 120 110 100 90 80 70 30 60 90 60 50 0 500 1000 IF(AV) [A] 120 1500 2000 PF(AV) [W] 3000 180 2500 2000 1500 1000 500 0 0 500 1000 60 30 90 120 1500 2000 IF(AV) [A] AT1004 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 06 POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation ON-STATE CHARACTERISTIC Tj = 125 C SURGE CHARACTERISTIC Tj = 125 C 5000 4500 4000 On-state Current [A] 3500 ITSM [kA] 3000 2500 2000 1500 1000 500 0 0.6 1.1 1.6 On-state Voltage [V] 30 25 20 15 10 5 0 1 10 n cycles 100 TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 30.0 25.0 Zth j-h [C/kW] 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 m. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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